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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

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Paper Title Page

Preface

Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology

Authors: Shintaro Miyazawa

1

Hot Topics: Theory

Authors: A.M. Stoneham

9

AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors

Authors: Y. Bar-Yam, J.D. Joannopoulos

19

Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities

Authors: C.M. Weinert, Matthias Scheffler

25

Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods

Authors: Gary G. DeLeo, W. Beall Fowler, Geralyn W. Barry, Morgan Besson

31

Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs

Authors: Christian Delerue, G. Allan, Michel Lannoo

37

Tight-Binding Study of the Silicon Divacancy

Authors: P. Pecheur, G. Toussaint

43

Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe

Authors: Hélio Chacham, José Luis Alves, M.L. de Siqueira

49

Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon

Authors: Lucy V.C. Assali, J.R. Leite

55

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