Hot Topics: Theory
p.9
p.9
AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors
p.19
p.19
Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities
p.25
p.25
Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods
p.31
p.31
Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
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p.37
Tight-Binding Study of the Silicon Divacancy
p.43
p.43
Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe
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p.49
Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
p.55
p.55
Calculation of the Spin-Polarized Electronic Structure of Si: Feoi in Super-Cell Full-Potential Linearized Augumented Plane Wave Method
p.61
p.61
Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
37-41
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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