Fundamental Defects in GaAs: Present and Prospective in GaAs Microelectronics Technology
p.1
p.1
Hot Topics: Theory
p.9
p.9
AB-Initio Theory of Defects in Crystalline and Amorphous Semiconductors
p.19
p.19
Chalcogen and Vacancy Pairs in Silicon: Electronic Structure and Stabilities
p.25
p.25
Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods
p.31
p.31
Selfconsistent Tight Binding Theory of Trends for Substitutional Transition Metal Ions in Si and GaAs
p.37
p.37
Tight-Binding Study of the Silicon Divacancy
p.43
p.43
Electronic Structure of Cationic Substitutional Cu, Ag, Au, and the Metal Vacancy in ZnS, ZnSe and CdTe
p.49
p.49
Theoretical Model of Transition Metal-Shallow Acceptor Impurity Pairs in Silicon
p.55
p.55
Electronic Structures of Substitutional Off-Center and Small-Aggregate Defects in Silicon by Semi-Empirical Green's Function Methods
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
31-36
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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