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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

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Paper Title Page

The Arsenic Antisite Defect in GaAs and Its Relation to EL2

Authors: B.K. Meyer, D.M. Hofmann, Johann Martin Spaeth

311

Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability

Authors: W. Kuszko, P.J. Walczak, P. Trautman, Maria Kaminska, Jacek M. Baranowski

317

Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs

Authors: Yasunori Mochizuki, Toshiyuki Ikoma

323

The Energy Position of the EL2 Ground State in GaAs

Authors: P. Omling, P. Silverberg, L. Samuelson

329

EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers

Authors: M. Lopez, E. Abril, B. Jimenez, M. Aguilar, Elias Muñoz Merino

335

As_Ga-As_i-As_Ga Complex as a Model of EL2 Centre in GaAs

Authors: T. Figielski

341

Optically-Assisted Thermal Anneal of Metastable Defects in GaAs

Authors: J.C. Parker, Ralph Bray

347

Resonant Raman Scattering at Point Defects in GaAs

Authors: Matthias Scheffler, Udo Scherz

353

Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs

Authors: B. Dischler, Franziska Fuchs, Ulrich Kaufmann

359

ESR Studies of Semi-Insulating GaAs Crystals

Authors: J. Bittebierre, R.T. Cox, E. Molva

365

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