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Paper Titles
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
p.311
Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
p.317
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323
The Energy Position of the EL2 Ground State in GaAs
p.329
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
p.341
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347
Resonant Raman Scattering at Point Defects in GaAs
p.353
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359

EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

335-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.335

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Online since:

January 1986

Authors:

M. Lopez, E. Abril, B. Jimenez, M. Aguilar, Elias Muñoz Merino

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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