EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

335-340

Citation:

M. Lopez et al., "EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers", Materials Science Forum, Vols. 10-12, pp. 335-340, 1986

Online since:

January 1986

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Price:

$38.00

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