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EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
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Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
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Resonant Raman Scattering at Point Defects in GaAs
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Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
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ESR Studies of Semi-Insulating GaAs Crystals
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EL2 Quenching Behaviour in Infrared GaAs Transmission Images
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Introduction to Metastability: Configuration Coordinate Diagrams
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Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Infrared Investigations of Persistent Carriers,...

Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

359-364

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.359

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Online since:

January 1986

Authors:

B. Dischler, Franziska Fuchs, Ulrich Kaufmann

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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