Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359
p.359
ESR Studies of Semi-Insulating GaAs Crystals
p.365
p.365
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
p.371
p.371
Introduction to Metastability: Configuration Coordinate Diagrams
p.377
p.377
Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
p.387
p.387
Metastable States of the DX Center in AlxGa1-xAs
p.393
p.393
Environmental Effects in DX (Te) Centers in GaAlAs
p.399
p.399
Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
p.405
p.405
Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
p.411
p.411
Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
387-392
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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