Paper Titles

Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
p.387

Metastable States of the DX Center in Al_xGa_1-xAs
p.393

Environmental Effects in DX (Te) Centers in GaAlAs
p.399

Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
p.405

Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
p.411

Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
p.417

The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE
p.423

A New Model of Deep Donor Centers in Al_xGa_1-xAs
p.429

Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
p.435

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Trapping Characteristics and Analysis of...

Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

411-416

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.411

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Online since:

January 1986

Authors:

Elias Muñoz Merino, A. Gómez, Enrique Calleja, J.J. Criado, J.M. Herrero, F. Sandoval

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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