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Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
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Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
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Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
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The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE
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A New Model of Deep Donor Centers in Al_xGa_1-xAs
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Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
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Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
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Multiphonon Recombination by Bourgoin-Corbett Mechanism
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Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12A New Model of Deep Donor Centers in AlxGa1-xAs

A New Model of Deep Donor Centers in Al_xGa_1-xAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

429-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.429

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Online since:

January 1986

Authors:

J.C.M. Henning, J.P.M. Ansems

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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