Paper Titles

Metastable States of the DX Center in Al_xGa_1-xAs
p.393

Environmental Effects in DX (Te) Centers in GaAlAs
p.399

Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
p.405

Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
p.411

Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
p.417

The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE
p.423

A New Model of Deep Donor Centers in Al_xGa_1-xAs
p.429

Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
p.435

Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
p.445

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Effect of the Host Band Structure on Capture and...

Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

417-422

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.417

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Online since:

January 1986

Authors:

Patricia M. Mooney, Enrique Calleja, S.L. Wright, M. Heiblum

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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