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Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
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The Ge-Related DX Level in Sn/Ge-Doped AlxGa1-xAs Hetero-Junctions Grown by LPE
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Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
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Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
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Multiphonon Recombination by Bourgoin-Corbett Mechanism
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Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon
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On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
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Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

445-450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.445

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Online since:

January 1986

Authors:

Alain Sibille

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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