Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
p.445
p.445
Multiphonon Recombination by Bourgoin-Corbett Mechanism
p.451
p.451
Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon
p.457
p.457
On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
p.463
p.463
Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξμ
p.469
p.469
Cathodoluminescence Contrast from Localized Defects in Semiconductors
p.475
p.475
A Study of Electron Capture Cross Sections of A-Center and Gold Acceptor in Silicon under Uniaxial Stress
p.481
p.481
Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice
p.487
p.487
Zero-Phonon Line of Deep-Level Luminescence in GaAs
p.493
p.493
Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξμ
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
469-474
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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