Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξμ
p.469
p.469
Cathodoluminescence Contrast from Localized Defects in Semiconductors
p.475
p.475
A Study of Electron Capture Cross Sections of A-Center and Gold Acceptor in Silicon under Uniaxial Stress
p.481
p.481
Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice
p.487
p.487
Zero-Phonon Line of Deep-Level Luminescence in GaAs
p.493
p.493
Accurate Determination of Capture Time Constant of Interface States in MOS Structures
p.499
p.499
Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors
p.505
p.505
Constant Photo-EPR: A New Method for Deep Level Characterization
p.515
p.515
Characterization of Deep Levels by Microwave Absorption Spectroscopy
p.521
p.521
Zero-Phonon Line of Deep-Level Luminescence in GaAs
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
493-498
Citation:
Online since:
January 1986
Authors:
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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