Transition Metal Impurities-Induced Nonradiative Recombination Processes in the ZnS Lattice
p.487
p.487
Zero-Phonon Line of Deep-Level Luminescence in GaAs
p.493
p.493
Accurate Determination of Capture Time Constant of Interface States in MOS Structures
p.499
p.499
Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors
p.505
p.505
Constant Photo-EPR: A New Method for Deep Level Characterization
p.515
p.515
Characterization of Deep Levels by Microwave Absorption Spectroscopy
p.521
p.521
Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
p.527
p.527
Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs0.6P0.4
p.533
p.533
Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
p.539
p.539
Constant Photo-EPR: A New Method for Deep Level Characterization
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
515-520
Citation:
Online since:
January 1986
Authors:
Price:
Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: