Paper Titles

Constant Photo-EPR: A New Method for Deep Level Characterization
p.515

Characterization of Deep Levels by Microwave Absorption Spectroscopy
p.521

Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam
p.527

Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs_0.6P_0.4
p.533

Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
p.539

Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon
p.545

On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC
p.551

Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method
p.557

Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon
p.563

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Optical Isothermal Transient Spectroscopy:...

Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

539-544

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.539

Citation:

Cite this paper

Online since:

January 1986

Authors:

Josep Samitier, J.R. Morante, A. Cornet, A. Herms, P. Roura, A. Pérez-Rodríguez

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: