Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

539-544

Citation:

J. Samitier et al., "Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs", Materials Science Forum, Vols. 10-12, pp. 539-544, 1986

Online since:

January 1986

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$38.00

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