Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

527-532

DOI:

10.4028/www.scientific.net/MSF.10-12.527

Citation:

P. J. Hautojärvi et al., "Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam", Materials Science Forum, Vols. 10-12, pp. 527-532, 1986

Online since:

January 1986

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$35.00

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