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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Profiling of Vacancy Defects in Ion-Implanted Si...

Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

527-532

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.527

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Online since:

January 1986

Authors:

Pekka J. Hautojärvi, H. Huomo, J. Lahtinen, J. Mäkinen

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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