Paper Titles

The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE
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A New Model of Deep Donor Centers in Al_xGa_1-xAs
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Optical Nuclear Polarization and Spin-Dependent Reactions in Semiconductors
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Evidence of "Coherent" Recombination on a Deep Center from Recombination Enhanced Defect Reactions
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Multiphonon Recombination by Bourgoin-Corbett Mechanism
p.451

Uniaxial Stress DLTS of Iron-Acceptor Pairs in Silicon
p.457

On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs
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Stress Effects of Deep Centers in Si, New Method to Determine Old Parameter Ξ_μ
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Cathodoluminescence Contrast from Localized Defects in Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Multiphonon Recombination by Bourgoin-Corbett...

Multiphonon Recombination by Bourgoin-Corbett Mechanism

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

451-456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.451

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Online since:

January 1986

Authors:

Tomas Markvart

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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