On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

463-468

Citation:

P.A. Murawala et al., "On the Behaviour of Hole Capture with Multiphonon Emission at Deep Level Defects H3 and H4 in p-GaAs", Materials Science Forum, Vols. 10-12, pp. 463-468, 1986

Online since:

January 1986

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