Paper Titles

Introduction to Metastability: Configuration Coordinate Diagrams
p.377

Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
p.387

Metastable States of the DX Center in Al_xGa_1-xAs
p.393

Environmental Effects in DX (Te) Centers in GaAlAs
p.399

Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs
p.405

Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP
p.411

Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs
p.417

The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE
p.423

A New Model of Deep Donor Centers in Al_xGa_1-xAs
p.429

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Trapping Characteristics of the Dual States of the...

Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

405-410

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.405

Citation:

Cite this paper

Online since:

January 1986

Authors:

S.V. Subramanian, B.M. Arora, Y.N. Mahopatra, Vikram Kumar

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: