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Paper Titles
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
p.341
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347
Resonant Raman Scattering at Point Defects in GaAs
p.353
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359
ESR Studies of Semi-Insulating GaAs Crystals
p.365
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
p.371
Introduction to Metastability: Configuration Coordinate Diagrams
p.377
Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon
p.387
Metastable States of the DX Center in AlxGa1-xAs
p.393

ESR Studies of Semi-Insulating GaAs Crystals

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

365-370

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.365

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Online since:

January 1986

Authors:

J. Bittebierre, R.T. Cox, E. Molva

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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