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Paper Titles
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323
The Energy Position of the EL2 Ground State in GaAs
p.329
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
p.341
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347
Resonant Raman Scattering at Point Defects in GaAs
p.353
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359
ESR Studies of Semi-Insulating GaAs Crystals
p.365
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
p.371

Optically-Assisted Thermal Anneal of Metastable Defects in GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

347-352

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.347

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Online since:

January 1986

Authors:

J.C. Parker, Ralph Bray

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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