Paper Titles

EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
p.299

A Model for the Atomic Configuration of the EL2 Defect in GaAs
p.305

The Arsenic Antisite Defect in GaAs and Its Relation to EL2
p.311

Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
p.317

Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323

The Energy Position of the EL2 Ground State in GaAs
p.329

EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335

As_Ga-As_i-As_Ga Complex as a Model of EL2 Centre in GaAs
p.341

Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Optical Transition Mechanisms via Excited State...

Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

323-328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.323

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Online since:

January 1986

Authors:

Yasunori Mochizuki, Toshiyuki Ikoma

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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