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Paper Titles
Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
p.271
Electronic Structure and Positron States at Vacancies in Semiconductors
p.277
Search for the Full Atomic Structure of El2 in GaAs
p.283
Bistability and Metastability of VGa in GaAs
p.293
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
p.299
A Model for the Atomic Configuration of the EL2 Defect in GaAs
p.305
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
p.311
Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
p.317
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323

EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

299-303

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.299

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Online since:

January 1986

Authors:

Hans Jürgen von Bardeleben, J.C. Bourgoin, A. Miret

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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