Endor-Investigation of the Ga Vacancy in GaP
p.259
p.259
Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation
p.265
p.265
Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
p.271
p.271
Electronic Structure and Positron States at Vacancies in Semiconductors
p.277
p.277
Search for the Full Atomic Structure of El2 in GaAs
p.283
p.283
Bistability and Metastability of VGa in GaAs
p.293
p.293
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
p.299
p.299
A Model for the Atomic Configuration of the EL2 Defect in GaAs
p.305
p.305
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
p.311
p.311
Search for the Full Atomic Structure of El2 in GaAs
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
283-291
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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