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Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Characterization of Vacancy Defects in As-Grown...

Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

265-270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.265

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Online since:

January 1986

Authors:

M. Stucky, C. Corbel, B. Geffroy, P. Moser, Pekka J. Hautojärvi

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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