Paper Titles

Deep Level at Semiconductor Surfaces
p.223

Charged Defect States at Silicon Grain Boundaries
p.229

Bulk and Grain Boundary Defects in Polycrystalline ZnO
p.235

The Role of Defect Production at Surface and Interface of CdHgTe and ZnHgTe
p.241

Electronic Structure of As and P Antisite Defects and Ga Vacancy in GaP and GaAs
p.247

EPR Spectra of AsGa Aggregates in GaAs
p.253

Endor-Investigation of the Ga Vacancy in GaP
p.259

Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation
p.265

Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
p.271

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Electronic Structure of As and P Antisite Defects...

Electronic Structure of As and P Antisite Defects and Ga Vacancy in GaP and GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

247-251

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.247

Citation:

Cite this paper

Online since:

January 1986

Authors:

S. Biernacki

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: