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Paper Titles
EPR Spectra of AsGa Aggregates in GaAs
p.253
Endor-Investigation of the Ga Vacancy in GaP
p.259
Characterization of Vacancy Defects in As-Grown and Electron Irradiated GaAs by Positron Annihilation
p.265
Triplet Spin ODMR from Phosphorous Antisites in Undoped InP
p.271
Electronic Structure and Positron States at Vacancies in Semiconductors
p.277
Search for the Full Atomic Structure of El2 in GaAs
p.283
Bistability and Metastability of VGa in GaAs
p.293
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
p.299
A Model for the Atomic Configuration of the EL2 Defect in GaAs
p.305

Electronic Structure and Positron States at Vacancies in Semiconductors

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

277-282

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.277

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Online since:

January 1986

Authors:

M.J. Puska

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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