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Paper Titles
Bistability and Metastability of VGa in GaAs
p.293
EPR Observation of the Arsenic Antisite - Arsenic Vacancy Complex
p.299
A Model for the Atomic Configuration of the EL2 Defect in GaAs
p.305
The Arsenic Antisite Defect in GaAs and Its Relation to EL2
p.311
Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
p.317
Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323
The Energy Position of the EL2 Ground State in GaAs
p.329
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
p.341

Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

317-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.317

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Online since:

January 1986

Authors:

W. Kuszko, P.J. Walczak, P. Trautman, Maria Kaminska, Jacek M. Baranowski

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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