Paper Titles

Observation of New EL2 Related Properties in GaAs. Photodissociation Model of EL2 Metastability
p.317

Optical Transition Mechanisms via Excited State and a New Configuration Coordinate Model for EL2 in GaAs
p.323

The Energy Position of the EL2 Ground State in GaAs
p.329

EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335

As_Ga-As_i-As_Ga Complex as a Model of EL2 Centre in GaAs
p.341

Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347

Resonant Raman Scattering at Point Defects in GaAs
p.353

Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359

ESR Studies of Semi-Insulating GaAs Crystals
p.365

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12AsGa-Asi-AsGa Complex as a Model of EL2 Centre in...

As_Ga-As_i-As_Ga Complex as a Model of EL2 Centre in GaAs

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

341-346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.341

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Online since:

January 1986

Authors:

T. Figielski

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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