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Paper Titles
The Energy Position of the EL2 Ground State in GaAs
p.329
EL2 Characteristics of In-Doped Vapor Phase Epitaxy GaAs Layers
p.335
AsGa-Asi-AsGa Complex as a Model of EL2 Centre in GaAs
p.341
Optically-Assisted Thermal Anneal of Metastable Defects in GaAs
p.347
Resonant Raman Scattering at Point Defects in GaAs
p.353
Infrared Investigations of Persistent Carriers, Photo-Generated during EL2 Bleaching in GaAs
p.359
ESR Studies of Semi-Insulating GaAs Crystals
p.365
EL2 Quenching Behaviour in Infrared GaAs Transmission Images
p.371
Introduction to Metastability: Configuration Coordinate Diagrams
p.377

Resonant Raman Scattering at Point Defects in GaAs

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

353-358

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.353

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Online since:

January 1986

Authors:

Matthias Scheffler, Udo Scherz

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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