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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Paper Title Page

Accurate Determination of Capture Time Constant of Interface States in MOS Structures

Authors: D. Vuillaume, J. Barrier, Didier Stiévenard, J.C. Bourgoin

499

Application of Optically Detected Magnetic Resonance to the Characterization of Point Defects in Semiconductors

Authors: Johann Martin Spaeth

505

Constant Photo-EPR: A New Method for Deep Level Characterization

Authors: W. Jantsch, G. Brunthaler, G. Hendorfer

515

Characterization of Deep Levels by Microwave Absorption Spectroscopy

Authors: G. Ferenczi, D.L. Huber, W. Jantsch, G. Brunthaler

521

Profiling of Vacancy Defects in Ion-Implanted Si by Slow Positron Beam

Authors: Pekka J. Hautojärvi, H. Huomo, J. Lahtinen, J. Mäkinen

527

Analysis of the Electric Field Influence on the Emission Rate of the Te-Related Center in GaAs_0.6P_0.4

Authors: J.R. Morante, P. Roura, A. Pérez-Rodríguez, Josep Samitier, A. Cornet, A. Herms

533

Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs

Authors: Josep Samitier, J.R. Morante, A. Cornet, A. Herms, P. Roura, A. Pérez-Rodríguez

539

Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon

Authors: C. Cabanel, J.L. Maurice, J.Y. Laval

545

On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC

Authors: Th. Wichert, M. Swanson, A.F. Quenneville

551

Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method

Authors: Doris Forkel-Wirth, H. Foettinger, M. Iwatschenko-Borho, S. Malzer, F. Meyer, W. Witthuhn, Herbert Wolf

557