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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Paper Title Page

EL2 Quenching Behaviour in Infrared GaAs Transmission Images

Authors: M. Castagne, J.P. Fillard, J. Bonnafe, P. Gall

371

Introduction to Metastability: Configuration Coordinate Diagrams

Authors: G.A. Baraff

377

Trends in the Bistable Properties of Iron-Acceptor Pairs in Silicon

Authors: A. Chantre, Lionel C. Kimerling

387

Metastable States of the DX Center in Al_xGa_1-xAs

Authors: T.N. Theis

393

Environmental Effects in DX (Te) Centers in GaAlAs

Authors: L. Dobaczewski, Jerzy M. Langer

399

Trapping Characteristics of the Dual States of the D-X Center in MBE Grown Si-Doped AlGaAs

Authors: S.V. Subramanian, B.M. Arora, Y.N. Mahopatra, Vikram Kumar

405

Trapping Characteristics and Analysis of Te-Related DX Centers in AlGaAs and GaAsP

Authors: Elias Muñoz Merino, A. Gómez, Enrique Calleja, J.J. Criado, J.M. Herrero, F. Sandoval

411

Effect of the Host Band Structure on Capture and Emission Processes at DX Centers in AlGaAs

Authors: Patricia M. Mooney, Enrique Calleja, S.L. Wright, M. Heiblum

417

The Ge-Related DX Level in Sn/Ge-Doped Al_xGa_1-xAs Hetero-Junctions Grown by LPE

Authors: P. Krispin, J. Maege

423

A New Model of Deep Donor Centers in Al_xGa_1-xAs

Authors: J.C.M. Henning, J.P.M. Ansems

429

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