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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

Paper Title Page

Non-Stationary Infrared-Optical Processes Involving Deep Impurities in III-V Compound Semiconductors

Authors: J.H. Crasemann, H.-J. Schulz

693

Optically-Detected Magnetic Resonance of Gold Centres in Zinc Selenide

Authors: N.R.J. Poolton, J.E. Nicholls, J.J. Davies, B.J. Fitzpatrick

699

Structure of Pd, Pt and Au Impurities in Silicon: The Energy Levels under Uniaxial Stress and Hydrostatic Pressure

Authors: W. Stöffler, Joerg Weber

705

Interstitial 3d Transition Metal Impurities in Silicon: An Ab Initio Cluster Study

Authors: G. Aissing, R. Broer, W.C. Nieuwpoort, L.F. Feiner

711

Photoluminescence Studies on Gallium-Related Deffects in Silicon

Authors: Klaus Thonke, U. Schall, R. Sauer, N. Bürger

717

Identification of the Energy Levels of Si:Pd by DLTS

Authors: Jie Zhou, Sheng Yang Ruan, Hao Hong, Wei Kun Ge

723

Electrons of 3d Transition Metals in Silicon

Authors: E.G. Sieverts, D.A. Van Wezep, R. Van Kemp, C.A.J. Ammerlaan

729

High Resolution Transmission Electron Microscopy of Semiconductors and Their Defects

Authors: A. Ourmazd

735

Classification of Defects in Plastically Deformed Silicon

Authors: C. Kisielowski-Kemmerich, J. Czaschke, H. Alexander

745

The Growth Mechanism of Dislocation Loops in Arsenic Implanted Silicon

Authors: Kevin S. Jones, S. Prussin, Eicke R. Weber

751