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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

Paper Title Page

The Electronic Structure of the Oxygen-Vacancy Complex in Silicon

Authors: R. Van Kemp, E.G. Sieverts, C.A.J. Ammerlaan

875

Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon

Authors: Etienne G. Colas, Eicke R. Weber, R. Hull

881

Enhanced Oxygen Diffusion in Silicon at Low Temperatures

Authors: A.K. Tipping, R.C. Newman, D.C. Newton, J.H. Tucker

887

The 3942 cm^-1 Optical Band in Irradiated Crystalline Silicon

Authors: Gordon Davies, Edward C. Lightowlers, Michael Stavola, K. Bergman, Bengt Gunnar Svensson

893

N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon

Authors: H. Itoh, Kenji Murakami, K. Takita, Kohzoh Masuda

899

Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon

Authors: V.M.S. Gomes, J.R. Leite

905

Chalcogen Double Donors in Silicon

Authors: Gerhard Pensl, G. Roos, C. Holm, P. Wagner

911

The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond

Authors: Maria Helena Nazaré

917

The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds

Authors: J.A. Van Wyk, J.H.N. Loubser

923

Electronic and Vibrational Absorption of Interstitial Carbon in Silicon

Authors: R. Woolley, Edward C. Lightowlers, A.K. Tipping, M. Claybourn, R.C. Newman

929