Photoluminescence Spectroscopy of Proton Implantation Induced Defects in CdTe and ZnTe
p.857
p.857
Acceptors and Donors in the Wide-Gap Semiconductors ZnO and SnO2
p.863
p.863
On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon
p.869
p.869
The Electronic Structure of the Oxygen-Vacancy Complex in Silicon
p.875
p.875
Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon
p.881
p.881
Enhanced Oxygen Diffusion in Silicon at Low Temperatures
p.887
p.887
The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon
p.893
p.893
N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
p.899
p.899
Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon
p.905
p.905
Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 10-12)
Main Theme:
Edited by:
H.J. von Bardeleben
Pages:
881-886
Citation:
E. G. Colas et al., "Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon", Materials Science Forum, Vols. 10-12, pp. 881-886, 1986
Online since:
January 1986
Authors:
Price:
$41.00
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