Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

905-910

DOI:

10.4028/www.scientific.net/MSF.10-12.905

Citation:

V.M.S. Gomes and J.R. Leite, "Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon", Materials Science Forum, Vols. 10-12, pp. 905-910, 1986

Online since:

January 1986

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$35.00

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