N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

899-904

Citation:

H. Itoh et al., "N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon", Materials Science Forum, Vols. 10-12, pp. 899-904, 1986

Online since:

January 1986

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