The Electronic Structure of the Oxygen-Vacancy Complex in Silicon
p.875
p.875
Influence of Oxygen Precipitates on the Solution of Transition Metals in Silicon
p.881
p.881
Enhanced Oxygen Diffusion in Silicon at Low Temperatures
p.887
p.887
The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon
p.893
p.893
N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
p.899
p.899
Theoretical Investigation of Deep Level Complexes Related to Carbon and Oxygen Impurities in Silicon
p.905
p.905
Chalcogen Double Donors in Silicon
p.911
p.911
The Ultraviolet Absorption due to Single Substitutional Nitrogen in Diamond
p.917
p.917
The ESR Investigation of a Singly Ionized Sulphur Centre in Ib Diamonds
p.923
p.923
N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
899-904
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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