N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

899-904

DOI:

10.4028/www.scientific.net/MSF.10-12.899

Citation:

H. Itoh et al., "N-Concentration Dependence of Thermal Annealing Behavior of Substitutional N Impurities in Pulsed-Laser Annealed Silicon", Materials Science Forum, Vols. 10-12, pp. 899-904, 1986

Online since:

January 1986

Export:

Price:

$35.00

In order to see related information, you need to Login.