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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12On the Influence of Doping and Annealing on...

On the Influence of Doping and Annealing on Oxygen-Related Defects in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

869-874

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.869

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Online since:

January 1986

Authors:

Peter Mascher, S. Dannefaer, D. Kerr, S.K. Hahn

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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