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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Table of Contents

Paper Title Page

Ion-Implanted Oxygen Isotopes in Silicon

Authors: H.J. Stein

935

Far-IR Spectroscopy of Oxygen Donors in Germanium

Authors: Paul Clauws, J. Vennik

941

Identification of the Carbon Associated Radiation Damage Levels in Silicon

Authors: G. Ferenczi, Charalamos A. Londos, T. Pavelka, M. Somogyi, A. Mertens

947

Thermal Donors in Silicon - 1986

Authors: G.D. Watkins

953

Preferential Alignment of Thermal Donors in Si

Authors: P. Wagner, H. Gottschalck, J.M. Trombetta, G.D. Watkins

961

Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon

Authors: Achim Dörnen, A. Hangleiter

967

Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers

Authors: S.K. Hahn, S. Shatas, H.J. Stein, M. Arst, D.K. Sadana, Z.U. Rek, V. Stojanoff

973

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements

Authors: Joerg Weber, K. Köhler, F.J. Stützler, H.J. Queisser

979

The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates

Authors: Anne Henry, J.L. Pautrat, K. Saminadayar

985

Early Stage of the New Donors Formation in Cz-Silicon

Authors: Ph. Vendange, Anne Henry, K. Saminadayar, N. Magnea, J.L. Pautrat

991