Paper Titles

Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon
p.967

Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
p.973

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
p.979

The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates
p.985

Early Stage of the New Donors Formation in Cz-Silicon
p.991

Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
p.997

Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
p.1003

Oxygen Endor of Thermal Donors in Silicon
p.1009

A Model for the Density of Oxidation Induced Stacking Faults in Silicon
p.1015

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Early Stage of the New Donors Formation in...

Early Stage of the New Donors Formation in Cz-Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

991-996

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.991

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Online since:

January 1986

Authors:

Ph. Vendange, Anne Henry, K. Saminadayar, N. Magnea, J.L. Pautrat

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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