Paper Titles

Thermal Donors in Silicon - 1986
p.953

Preferential Alignment of Thermal Donors in Si
p.961

Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon
p.967

Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
p.973

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
p.979

The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates
p.985

Early Stage of the New Donors Formation in Cz-Silicon
p.991

Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
p.997

Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
p.1003

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Evidence for an Inhomogeneous Distribution of...

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

979-984

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.979

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Online since:

January 1986

Authors:

Joerg Weber, K. Köhler, F.J. Stützler, H.J. Queisser

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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