Paper Titles

Electronic and Vibrational Absorption of Interstitial Carbon in Silicon
p.929

Ion-Implanted Oxygen Isotopes in Silicon
p.935

Far-IR Spectroscopy of Oxygen Donors in Germanium
p.941

Identification of the Carbon Associated Radiation Damage Levels in Silicon
p.947

Thermal Donors in Silicon - 1986
p.953

Preferential Alignment of Thermal Donors in Si
p.961

Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon
p.967

Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
p.973

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
p.979

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Thermal Donors in Silicon - 1986

Thermal Donors in Silicon - 1986

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

953-960

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.953

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Online since:

January 1986

Authors:

G.D. Watkins

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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