Identification of the Carbon Associated Radiation Damage Levels in Silicon
p.947
p.947
Thermal Donors in Silicon - 1986
p.953
p.953
Preferential Alignment of Thermal Donors in Si
p.961
p.961
Time Resolved Study of Thermal Donor Related Luminescence Lines in Silicon
p.967
p.967
Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
p.973
p.973
Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
p.979
p.979
The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates
p.985
p.985
Early Stage of the New Donors Formation in Cz-Silicon
p.991
p.991
Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
p.997
p.997
Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
Abstract:
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Periodical:
Materials Science Forum (Volumes 10-12)
Pages:
973-978
Citation:
Online since:
January 1986
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Сopyright:
© 1986 Trans Tech Publications Ltd. All Rights Reserved
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