Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

973-978

Citation:

S.K. Hahn et al., "Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers ", Materials Science Forum, Vols. 10-12, pp. 973-978, 1986

Online since:

January 1986

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