Paper Titles

Effects of 450°C Thermal Annealing Upon Oxygen Precipitation in B-Doped CZ Si Wafers
p.973

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
p.979

The New Donors in Silicon: The Effect of the Inversion Layers Surrounding Precipitates
p.985

Early Stage of the New Donors Formation in Cz-Silicon
p.991

Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
p.997

Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
p.1003

Oxygen Endor of Thermal Donors in Silicon
p.1009

A Model for the Density of Oxidation Induced Stacking Faults in Silicon
p.1015

Enhanced Oxygen Diffusion in Silicon at Thermal Donor Formation Temperature
p.1021

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Properties of the Shallow Thermal Donors in...

Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 14

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

997-1002

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.997

Citation:

Cite this paper

Online since:

January 1986

Authors:

J.A. Griffin, H. Navarro, Joerg Weber, L. Genzel

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1986 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: