Paper Titles

Evidence for an Inhomogeneous Distribution of Thermal Donors in Silicon from Electrical and Optical Measurements
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Early Stage of the New Donors Formation in Cz-Silicon
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Properties of the Shallow Thermal Donors in CZ-Silicon as Studied by Photothermal Ionization Spectroscopy (PTIS)
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Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon
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Oxygen Endor of Thermal Donors in Silicon
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A Model for the Density of Oxidation Induced Stacking Faults in Silicon
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Enhanced Oxygen Diffusion in Silicon at Thermal Donor Formation Temperature
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Radiative Defects in Electron Irradiated InP
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Electronic Properties of Deep Level Defects in...

Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1003-1008

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1003

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Online since:

January 1986

Authors:

Satoru Matsumoto, Hiroyuki Kaneko, Takehiro Sasao

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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