Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1003-1008

DOI:

10.4028/www.scientific.net/MSF.10-12.1003

Citation:

S. Matsumoto et al., "Electronic Properties of Deep Level Defects in Thermally Annealed CZ Silicon", Materials Science Forum, Vols. 10-12, pp. 1003-1008, 1986

Online since:

January 1986

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$35.00

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