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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12A Model for the Density of Oxidation Induced...

A Model for the Density of Oxidation Induced Stacking Faults in Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1015-1020

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1015

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Online since:

January 1986

Authors:

F.G. Kuper, Jeff T.M. de Hosson, J.F. Verwey

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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