Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1039-1044

DOI:

10.4028/www.scientific.net/MSF.10-12.1039

Citation:

F. M. Wu et al., "Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet", Materials Science Forum, Vols. 10-12, pp. 1039-1044, 1986

Online since:

January 1986

Export:

Price:

$35.00

In order to see related information, you need to Login.