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A Model for the Density of Oxidation Induced Stacking Faults in Silicon
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Radiative Defects in Electron Irradiated InP
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Thermal Transformation of the Electron-Irradiation-Induced Defect H₄ in p Type InP
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Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet
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Electron Microscope Observation of Highly Disordered Regions in Neutron Irradiated Germanium
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Climbing of Nearly Screw Dislocations in InSb Thin Foils Irradiated in a High Voltage Electron Microscope
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Study of Electron Irradiation-Induced Defects in...

Study of Electron Irradiation-Induced Defects in N-Type Active Layer of GaAs Mesfet

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1039-1044

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1039

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Online since:

January 1986

Authors:

Feng Mei Wu, Qi Ji Lai, Ling Xu, Ban Rui Gong, Xiug Meng Zhou

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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