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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12

Materials Science Forum Vols. 10-12

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12

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Paper Title Page

Photoluminescence Study of Fe²⁺ in InP_1-xAs_x:Fe Alloys

Authors: Paul B. Klein, S.G. Bishop, R.L. Henry, A.M. Kriman, N.D. Wilsey

1117

Electron Microscopy Data for Threshold Energy of Point Defect Creation in Silicon

Authors: Liudmila I. Fedina, A.L. Aseev, S.G. Denisenko, L.S. Smirnov

1123

Beam-Induced Annealing of Defects Created by Imlantation at 30 K in Si

Authors: Brian Bech Nielsen, J.U. Andersen

1129

Annealing Behaviour of High Concentration of Sn and Sb Implanted in Silicon

Authors: G. Weyer, Arne Nylandsted-Larsen, F.T. Pedersen, R. Galloni, R. Rizzoli

1135

Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation

Authors: Manfred Deicher, G. Grübel, E. Recknagel, Th. Wichert

1141

Defects Related to Nitrogen Implantation in Silicon Single Crystals

Authors: M. Bode, A. Jakubowicz, H.U. Habermeier

1147

Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study

Authors: G. Vanderschaeve, R.W. Carpenter, J.C. Barry, C.J. Varker, S.R. Wilson

1153

Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation

Authors: A. Hobbs, R.C. Barklie, K.J. Reeson, P.L.F. Hemment

1159

Investigation of the Lattice Defects in P Ion Implanted Silicon

Authors: H. Bender, D. Avau, W. Vandervorst, J. Van Landuyt, H.E. Maes

1165

Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium

Authors: Kazuyoshi Ito, Ichiro Baba, Kaoru Mizuno, Takashi Ito

1171

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