Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1159-1164

DOI:

10.4028/www.scientific.net/MSF.10-12.1159

Citation:

A. Hobbs et al., "Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O+ Implantation", Materials Science Forum, Vols. 10-12, pp. 1159-1164, 1986

Online since:

January 1986

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$35.00

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