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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Dose Dependence of Defects in Silicon Produced by...

Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1159-1164

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1159

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Online since:

January 1986

Authors:

A. Hobbs, R.C. Barklie, K.J. Reeson, P.L.F. Hemment

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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