Paper Titles

Structural Defects in Ion-Implanted Silicon Observed by Perturbed Angular Correlation
p.1141

Defects Related to Nitrogen Implantation in Silicon Single Crystals
p.1147

Precipitate Morphologies in Oxygen - Ion Implanted Silicon: A High Resolution Electron Microscopy Study
p.1153

Dose Dependence of Defects in Silicon Produced by High Dose, High Temperature O⁺ Implantation
p.1159

Investigation of the Lattice Defects in P Ion Implanted Silicon
p.1165

Interaction of Point Defects with Implanted Hydrogen in Undoped Germanium
p.1171

Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth
p.1177

As-Implanted Lattice Sites of Dopants in Semiconductors
p.1183

Defect Structures in Ion-Implanted InSb
p.1189

HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Investigation of the Lattice Defects in P Ion...

Investigation of the Lattice Defects in P Ion Implanted Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

1165-1170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.1165

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Online since:

January 1986

Authors:

H. Bender, D. Avau, W. Vandervorst, J. Van Landuyt, H.E. Maes

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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