Investigation of the Lattice Defects in P Ion Implanted Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1165-1170

DOI:

10.4028/www.scientific.net/MSF.10-12.1165

Citation:

H. Bender et al., "Investigation of the Lattice Defects in P Ion Implanted Silicon", Materials Science Forum, Vols. 10-12, pp. 1165-1170, 1986

Online since:

January 1986

Export:

Price:

$35.00

In order to see related information, you need to Login.